Hole spin polarization in GaAlAs:Mn structures

Дата и время публикации : 2000-10-06T20:57:40Z

Авторы публикации и институты :
A. Ghazali
I. C. da Cunha Lima
M. A. Boselli

Ссылка на журнал-издание: Phys. Rev B, vol. 63, 153305 (2001)
Коментарии к cтатье: 4 pages
Первичная категория: cond-mat.mtrl-sci

Все категории : cond-mat.mtrl-sci

Краткий обзор статьи: A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.

Category: Physics