Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

Дата и время публикации : 2000-09-27T13:29:13Z

Авторы публикации и институты :
C. Villagonzalo
R. A. Roemer
M. Schreiber
A. MacKinnon

Ссылка на журнал-издание: Ссылка на журнал-издание не найдена
Коментарии к cтатье: presented at the 25th International Conference on the Physics of Semiconductors, 17-22 Sept., Osaka, Japan
Первичная категория: cond-mat.dis-nn

Все категории : cond-mat.dis-nn

Краткий обзор статьи: The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $sigma$ obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent $z$ in agreement with predictions from scaling theories, we show that the temperature-dependent $sigma$, the thermoelectric power $S$, the thermal conductivity $K$ and the Lorenz number $L_0$ obey scaling.

Category: Physics