The surfactant effect in semiconductor thin film growth

Дата и время публикации : 1999-01-19T11:31:34Z

Авторы публикации и институты :
Daniel Kandel
Efthimios Kaxiras

Ссылка на журнал-издание: Ссылка на журнал-издание не найдена
Коментарии к cтатье: 38 pages, LaTex, Submitted to Solid State Physics
Первичная категория: cond-mat.mtrl-sci

Все категории : cond-mat.mtrl-sci, cond-mat.stat-mech

Краткий обзор статьи: The theoretical and experimental status of surfactant mediated semiconductor epitaxial growth is reviewed. We discuss homoepitaxy as well as heteroepitaxy, and emphasize in particular issues related to the mechanism by which surfactants suppress growth of three dimensional islands in heteroepitaxy. We argue that the dominant mechanism is passivation of island edges, which leads to suppression of attachment and detachment of atoms to and from island edges.

Category: Physics