Дата и время публикации : 1999-01-19T11:31:34Z
Авторы публикации и институты :
Daniel Kandel
Efthimios Kaxiras
Ссылка на журнал-издание: Ссылка на журнал-издание не найдена
Коментарии к cтатье: 38 pages, LaTex, Submitted to Solid State Physics
Первичная категория: cond-mat.mtrl-sci
Все категории : cond-mat.mtrl-sci, cond-mat.stat-mech
Краткий обзор статьи: The theoretical and experimental status of surfactant mediated semiconductor epitaxial growth is reviewed. We discuss homoepitaxy as well as heteroepitaxy, and emphasize in particular issues related to the mechanism by which surfactants suppress growth of three dimensional islands in heteroepitaxy. We argue that the dominant mechanism is passivation of island edges, which leads to suppression of attachment and detachment of atoms to and from island edges.