Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))

Дата и время публикации : 1999-01-03T02:50:19Z

Авторы публикации и институты :
S. V. Kravchenko (Northeastern University)
M. P. Sarachik (City College of New York)
D. Simonian (Columbia University)

Ссылка на журнал-издание: Phys. Rev. Lett. 83, 2091 (1999)
Коментарии к cтатье: 1 page; submitted to PRL
Первичная категория: cond-mat.str-el

Все категории : cond-mat.str-el

Краткий обзор статьи: In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer), rather than to intrinsic behavior of interacting particles associated with a conductor-insulator transition in two dimensions. We argue against this model based on existing experimental evidence.

Category: Physics