Bulk Tunneling at Integer Quantum Hall Transitions

Дата и время публикации : 1998-12-11T07:15:50Z

Авторы публикации и институты :
Ziqiang Wang
Shanhui Xiong

Ссылка на журнал-издание: Phys. Rev. Lett. 83, 828 (1999).
Коментарии к cтатье: 4 pages, revtex, final version to appear in Phys. Rev. Lett
Первичная категория: cond-mat.mes-hall

Все категории : cond-mat.mes-hall

Краткий обзор статьи: The tunneling into the {em bulk} of a 2D electron system (2DES) in strong magnetic field is studied near the integer quantum Hall transitions. We present a nonperturbative calculation of the tunneling density of states (TDOS) for both Coulomb and short-ranged electron-electron interactions. In the case of Coulomb interaction, the TDOS exhibits a 2D quantum Coulomb gap behavior, $nu(ve)=C_Qave/e^4$, with $C_Q$ a nonuniversal coefficient of quantum mechanical origin. For short-ranged interactions, we find that the TDOS at low bias follows $nu(ve)/nu (0)=1+(ave/ve_0)^gamma$, where $gamma$ is a universal exponent determined by the scaling dimension of short-ranged interactions.

Category: Physics