Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells

Дата и время публикации : 1998-08-10T16:01:33Z

Авторы публикации и институты :
V. Fiorentini (CA,Munich)
F. Bernardini (CA)
F. Della Sala (Rroma-2)
A. DiCarlo (Rroma-2)
P. Lugli (Rroma-2)

Ссылка на журнал-издание: Ссылка на журнал-издание не найдена
Коментарии к cтатье: RevTeX 10 pages, 9 figures
Первичная категория: cond-mat.mtrl-sci

Все категории : cond-mat.mtrl-sci

Краткий обзор статьи: Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.

Category: Physics