Step edge barriers on GaAs(001)

Дата и время публикации : 1993-11-29T10:15:06Z

Авторы публикации и институты :
Pavel Šmilauer
Dimitri D. Vvedensky

Ссылка на журнал-издание: Ссылка на журнал-издание не найдена
Коментарии к cтатье: 11 pages, REVTeX 3.0, IC-DDV-93-005
Первичная категория: cond-mat

Все категории : cond-mat

Краткий обзор статьи: We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high–energy electron–diffraction specular intensity measured near in–phase diffraction conditions and the surface step density obtained from simulations of a solid–on–solid model. Only by including a barrier to interlayer transport and a short–range incorporation process of freshly–deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post–growth equilibration of the surface.

Category: Physics