Enhancement of the decay rate of nonequilibrium carrier distributions due to scattering-in processes

Дата и время публикации : 1993-02-08T13:58:00Z

Авторы публикации и институты :
B. A. Sanborn
Ben Yu-Kuang Hu
S. Das Sarma

Ссылка на журнал-издание: Ссылка на журнал-издание не найдена
Коментарии к cтатье: 4 pages, figure available on request, RevTex 2.0. (NIST-BAS-93-01)
Первичная категория: cond-mat

Все категории : cond-mat

Краткий обзор статьи: We show that, for some semiconductor devices and physical experiments, processes which scatter electrons {em into} a state $|{bf k}rangle$ can contribute strongly to the decay of a nonequilibrium electron occupation of $|{bf k}rangle$. For electrons, the decay rate $gamma({bf k})$ is given by the sum of the total scattering-out {em and scattering-in} rates of state $|{bf k}rangle$. The scattering-in term, which is often neglected in calculations, increases $gamma({bf k})$ of low energy electrons injected into semidegenerate systems, which includes many doped semiconductor structures at nonzero temperatures, particularly those of reduced dimensions.

Category: Physics